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IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3 30 Single
D
FEATURES
600 1.2
* Surface Mount (IRFBC40S/SiHFBC40S) * Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) SiHFBC20S) * Dynamic dV/dt Rating * 150 C Operating Temperature * Fast Switching * Fully Avalanche Rated * Lead (Pb)-free Available
Available
RoHS* * Available in Tape and Reel (IRFBC20S, COMPLIANT
I2PAK (TO-262)
D2PAK (TO-263)
DESCRIPTION
G G D S S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L/SiHFBC40L) is available for low-profile applications.
ORDERING INFORMATION
Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRFBC40SPbF SiHFBC40S-E3 IRFBC40S SiHFBC40S D2PAK (TO-263) IRFBC40STRLPbFa SiHFBC40STL-E3a IRFBC40STRLa SiHFBC40STLa I2PAK (TO-262) IRFBC40LPbF SiHFBC40L-E3 IRFBC40L SiHFBC40L
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltagee Gate-Source Voltagee Continuous Drain Current Pulsed Drain Currenta,e Linear Derating Factor Single Pulse Avalanche Energyb, e Repetitive Avalanche Currenta Repetitive Avalanche Energya TC = 25 C TA = 25 C EAS IAR EAR PD dV/dt VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 600 20 6.2 3.9 25 1.0 570 6.2 13 130 3.1 3.0 W/C mJ A mJ W V/ns A UNIT V
Maximum Power Dissipation Peak Diode Recovery dV/dtc, e
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91116 S-Pending-Rev. A, 23-Jun-08 www.vishay.com 1
WORK-IN-PROGRESS
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V; starting TJ = 25 C, L = 27 mH, RG = 25 , IAS = 6.2 A (see fig. 12). c. ISD 6.2 A, dI/dt 80 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. Uses IRFBC40/SiHFBC40 data and test conditions. SYMBOL TJ, Tstg LIMIT - 55 to + 150 300d UNIT C
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient (PCB Mounted, steady-state)a Maximum Junction-to-Case SYMBOL RthJA RthJC TYP. MAX. 40 1.0 UNIT C/W
Note a. When mounted on 1" square PCB ( FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LS Between lead, and center of die contact VDD = 300 V, ID = 6.2 A, RG = 9.1 , RD = 47 ,VGS = 10 V, see fig. 10b, c VGS = 10 V ID = 6.2 A, VDS = 3600 V, see fig. 6 and 13b, c VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c 1300 160 30 13 18 55 20 7.5 60 8.3 30 nH ns nC pF VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 3.7 Ab VDS = 100 V, ID = 3.7 Ab 600 2.0 4.7 0.70 4.0 100 100 500 1.2 V V/C V nA A S SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
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Document Number: 91116 S-Pending-Rev. A, 23-Jun-08
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
450 3.8
6.2 A 25 1.5 940 7.9 V ns C
G
S
TJ = 25 C, IS = 6.2 A, VGS = 0 Vb TJ = 25 C, IF = 6.2 A, dI/dt = 100 A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Uses IRFBC40/SiHFBC40 data and test conditions.
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91116 S-Pending-Rev. A, 23-Jun-08
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IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91116 S-Pending-Rev. A, 23-Jun-08
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
VDS VGS RG
D.U.T. + - VDD
10 V
Pulse width 1 s Duty factor 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
10 % VGS td(on) tr td(off) tf
Fig. 8 - Maximum Safe Operating Area
Fig. 10b - Switching Time Waveforms
Document Number: 91116 S-Pending-Rev. A, 23-Jun-08
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IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L Vary tp to obtain required IAS RG VDS tp VDD D.U.T I AS 10 V tp 0.01 IAS
Fig. 12b - Unclamped Inductive Waveforms
VDS
+ -
V DD
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
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Document Number: 91116 S-Pending-Rev. A, 23-Jun-08
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L
Vishay Siliconix
Current regulator Same type as D.U.T.
50 k 12 V 0.2 F 0.3 F
10 V QGS
QG
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91116.
Document Number: 91116 S-Pending-Rev. A, 23-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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